PART |
Description |
Maker |
EN29LV160B-70TP EN29LV160B-90BP EN29LV160B-90TIP E |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
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Eon Silicon Solution, Inc.
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EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏, Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers List of Unclassifed Manufac...
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EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc. ETC
|
EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70 |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
EN29LV160JT70S EN29LV160JT70SI EN29LV160JT70SIP EN |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
ETC
|
A28F010 |
1024K (128K x 8) CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
MX29F080 29F080 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY From old datasheet system
|
Macronix 旺宏
|
EN39SL160AH-70BAP EN39SL160AH-70BIP EN39SL160AL-70 |
16 Megabit (1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
EN39SL160H EN39SL160H-70BI EN39SL160H-70BIP EN39SL |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
|
Eon Silicon Solution Inc.
|
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
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M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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EN29F080 EN29F08050S EN29F08050SI EN29F08090SI EN2 |
8 Megabit (1024K x 8-bit) Flash Memory 8兆位024K × 8位)闪存 From old datasheet system
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List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
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